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           Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Shottky barrier diode RB081L-20 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) General rectification ?Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. ?Construction Silicon epitaxial planar ?Structure ?Taping specifications (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Symbol UnitLimits VRM V VR V Io A5 IFSM A Tj °C125 Tstg °C?40 to ?125 ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 0.45 V IF=5.0A Reverse current IR - - 700 μA VR=20V Storage temperature (*1)Mounted on epoxy board. 180°Half sine wave Parameter Forward current surge peak (60Hz?1cyc) 70 Junction temperature Reverse voltage (DC) 20 Average rectified forward current (*1) Parameter Reverse voltage (repetitive peak) 25 PMDS 2.0 4.2 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 5.5±0.05 1.75±0.1 12±0.2 φ1.55 9.5±0.1 0.3 5.3±0.1 0.05 |